ProductsOIS Ion Source
Our proprietary high-performance RF ion source, optimized for ion-assisted deposition.
Suitable for high-rate vacuum deposition and substrate cleaning.
Features
- Compared to typical ion sources that use consumables such as filaments, it has a longer lifespan and less contamination.
- It offers high operational stability and can be operated for extended periods.
- It has high ion distribution uniformity, enabling high current and wide-area irradiation.
Specification
| OIS-Two/ OIS-Two Plus |
OIS-Three/ OIS-Three Plus |
OIS-Four | OIS-GL | |
| Dimensions | φ300mm×H150mm | φ390mm×H215mm | φ224mm×H143mm | φ163mm×H200mm |
| Grids | φ17㎝ | φ23cm/26cm | φ10cm | Gridless |
| Beam Voltage | 100V~1500V | 50V-350V | ||
| Max Beam Current | 1200mA | 1800mA/2400mA | 500mA | 8A |
| Acc Voltage | 100V~1000V | |||
| Max RF Power | 750W/1000W | 2000W | 600W | |
| Gas Flow Rate | 20sccm-30sccm(argon) 40sccm-60sccm(oxygen) |
10sccm-20sccm(argon) 25sccm-35sccm(oxygen) |
5sccm-50sccm(argon) 10sccm-100sccm(oxygen) |
|
| Pressure | 5×10⁻²Pa | 5×10⁻²Pa | 5×10⁻²Pa以下 | 3.5×10⁻²Pa以下 |